Nā ʻāpana Tungsten & Molybdenum no ka hoʻokomo ʻana i ka Ion

Kūleʻa kā mākou hui i ka hana ʻana i nā ʻāpana tungsten a me molybdenum no ka implantation ion. Aia kēia mau mea i ka cylinder pale o ka electron emission cathode, ka pā hoʻokuʻu, ke koʻokoʻo hoʻonohonoho kikowaena, ka pā filament o ke keʻena hoʻopau arc, a me nā mea ʻē aʻe. ʻOi aku ka kiʻekiʻe o nā waiwai mechanical kiʻekiʻe ma mua o ka tungsten maʻamau a me nā mea molybdenum, a ua hoʻolōʻihi ʻia ke ola lawelawe.


  • Noi:Ion implanter no ka ʻoihana semiconductor
  • Material:Maemae W, Maemae Mo
  • Nā ana:Hana e like me nā kaha kiʻi
  • MOQ:5 ʻāpana
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    Huahana Huahana

    Huahana Huahana

    Nā ʻāpana Tungsten & Molybdenum no ka hoʻokomo ʻana i ka Ion

    Hāʻawi mākou i nā ʻāpana ʻokoʻa ion-implanted tungsten a me molybdenum. Loaʻa ka nui o kā mākou huahana i ka nui o ka ʻāpana, ʻoi aku ka nui o ka nui ma mua o 99%, ʻoi aku ka kiʻekiʻe o nā waiwai mechanical kiʻekiʻe ma mua o nā mea tungsten-molybdenum maʻamau, a ʻoi aku ka lōʻihi o ke ola lawelawe.

    ʻO kēia mau ʻāpana implantation ion me:

    ʻO ka pahu pale pale cathode electron.

    papa hoʻolana.

    pou waena.

    Pīla filament interrupter, etc.

    ʻIkepili Ion Implantation Parts

    Inoa Huahana

    Ion Implantation Parts

    Mea waiwai

    Tungsten Maʻemaʻe (W) / Molybdenum Maʻemaʻe (Mo)

    Maemae

    99.95%

    ʻO ka mānoanoa

    W: 19.3g/cm³ / Mo: 10.2g/cm³

    Lae hehee

    W: 3410 ℃ / Mo: 2620 ℃

    Lae paila

    W: 5660 ℃ / Mo: 5560 ℃

    'Ōlelo Aʻo: Hoʻoponopono e like me nā kaha kiʻi

    Hoʻokomo ʻia ʻo Ion

    He hana koʻikoʻi ka hoʻokomo ʻana o Ion i ka hana semiconductor. Hoʻokomo nā ʻōnaehana Implanter i nā ʻātoma ʻē i loko o ka wafer e hoʻololi i nā waiwai waiwai, e like me ka conductivity uila a i ʻole ka hana aniani. ʻO ke ala ion beam ke kikowaena o ka ʻōnaehana implanter. Ma laila, hana ʻia nā ion, hoʻopaʻa ʻia, a hoʻolalelale ʻia i ka wafer ma nā velocities kiʻekiʻe loa.

    Nā ʻāpana Tungsten a me Molybdenum no ka hoʻokomo ʻana i ka Ion

    Ke hoʻololi ʻia ke kumu ion i nā ion plasma, hana ʻia nā mahana hana ma luna o 2000 ° C. Ke hoʻokuʻu ʻia ka lāʻau ion, hoʻopuka pū ia i ka nui o ka ikehu kinetic ion. Puhi a hehee koke ka metala. No laila, koi ʻia ka metala hanohano me ka nui o ka nuipaʻa e mālama i ke kuhikuhi o ka ion beam ejection a hoʻonui i ka lōʻihi o nā ʻāpana. ʻO Tungsten a me molybdenum ka mea kūpono.

    No ke aha e koho ai i nā mea Tungsten & Molybdenum no nā ʻāpana Ion Implantation

    ʻO ke kūpaʻa ʻino maikaʻiKa ikaika waiwai kiʻekiʻeMaikaʻi ka wela wela

    Hoʻopaʻa lākou i ka hana maikaʻi ʻana o nā ion a kālele pono ʻia i ka wafer ma ke ala beam a me ka ʻole o nā mea haumia.

    Hoʻokomo ʻia ʻo Ion i nā ʻāpana tungsten molybdenum

    ʻO kā mākou pono

    ʻO nā mea waiwai kiʻekiʻe
    ʻenehana hana kiʻekiʻe
    ʻO ka mīkini CNC pololei
    Ka hoomalu maikai
    ʻOi aku ka pōkole o ka lawe ʻana

    Hoʻolālā mākou e pili ana i ke kaʻina hana mua o tungsten a me nā mea molybdenum. Ma o ka hoʻomaʻemaʻe ʻana i ka palaoa, ka hoʻomaʻamaʻa ʻana, ka sintering vacuum a me ka isostatic pressing sintering densification, ka hoʻomaʻemaʻe ʻana i ka palaoa lua a me ka ʻenehana rolling controled, ke kūpaʻa kiʻekiʻe, ke kūpaʻa ʻana a me ke ola lawelawe o nā mea tungsten a me molybdenum.

    Semiconductor Ion Implantation Technology

    ʻO ka implantation Ion kahi hana maʻamau no ka doping a me ka hoʻololi ʻana i nā mea semiconductor. ʻO ka hoʻohana ʻana i ka ʻenehana implantation ion ua hoʻolaha nui i ka hoʻomohala ʻana o nā mea semiconductor a me ka ʻoihana kaapuni hoʻohui. No laila ke hana nei i ka hana ʻana o nā kaapuni i hoʻohui ʻia i ke au o ka nui a me ka ultra-large-scale (ULSI).

    hoʻokomo ʻia nā ion semiconductor
    Luna Kūʻai-Amanda-2023001

    Kāhea iā mā˚ou
    ʻO AmandaLuna kuai
    E-mail: amanda@winnersmetals.com
    Kelepona: +86 156 1977 8518(WhatsApp/Wechat)

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